1.9 0.95 0.95 2.9 0.4 1.3 2.4 1.0 AV42LT1 transistor? npn ? features power dissipation p cm : 0. 3 w ? t amb=25 ??? collector current i cm: 0.3 a c ollector - base voltage v (br) cbo : 300 v oper ating and storage junction temperature range t j ? t stg : - 55 ?? to +150 ?? electrical characteristics ? t amb =25 ?? unless otherwise specified ? p arameter symbol test conditions min max unit collector - base breakdown voltage v (br) cbo i c = 100 | a ? i e =0 300 v collector - emitter brea kdown voltage v (br) c e o i c = 1 m a ? i b =0 300 v emitter - base breakdown voltage v (br)eb o i e = 1 00 | a ? i c =0 5 v collector cut - off current i cbo v cb = 200 v , i e =0 0. 2 5 | a emitter cut - off current i ebo v eb = 5 v , i c =0 0.1 | a h fe ? 1 ? v ce = 10 v, i c = 1 m a 60 h fe ? 2 ? v ce = 10 v, i c = 1 0 m a 100 200 dc current gain h fe ? 3 ? v ce = 10 v, i c = 3 0 m a 60 collector - emitter saturation voltage v ce (sat) i c = 20 ma , i b = 2m a 0.2 v b ase - emitter saturation voltage v be (sat) i c = 20 m a, i b = 2m a 0.9 v transition frequency f t v ce = 20v, i c = 10ma f= 30mhz 50 mhz device marking mmbta42lt1=1d un it : mm sot ?a 23 1. base 2. emitter 3 . collector
sot -23 p ackage outline dimensions symbol a a1 a2 b c d e e1 e e1 l l1 | min 0.900 0.000 0.900 0.300 0.080 2.800 1.200 2.250 1.800 0.300 0 max 1.100 0.100 1.000 0.500 0.150 3.000 1.400 2.550 2.000 0.500 8 min 0.035 0.000 0.035 0.012 0.003 0.110 0.047 0.089 0.071 0.012 0 max 0.043 0.004 0.039 0.020 0.006 0.118 0.055 0.100 0.079 0.020 8 dimensions in millimeters dimensions in inches 0.037tpy 0.022ref 0.950tpy 0.550ref d e1 a1 a2 a e l1 l b e1 c 0.2 e |
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